IEC 63068-4-2022 PDF

Full title and description

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 4: Procedure for identifying and evaluating defects using a combined method of optical inspection and photoluminescence. IEC 63068-4:2022 provides a systematic procedure for identifying and evaluating defects in as-grown 4H‑SiC homoepitaxial wafers by combining optical inspection and photoluminescence (PL), and includes example images to assist detection and categorization of defects.

Abstract

IEC 63068-4:2022 defines a combined, non‑destructive test procedure using optical inspection together with photoluminescence to identify, categorize and evaluate defects in as‑grown 4H silicon carbide (SiC) homoepitaxial wafers intended for power device production. The document gives guidance on inspection workflow, interpretation of PL and optical images, and examples to support consistent defect recognition across manufacturing and test environments.

General information

• Status: Published / Current.
• Publication date: 27 July 2022.
• Publisher: International Electrotechnical Commission (IEC).
• ICS / categories: 31.080.99 (Other semiconductor devices).
• Edition / version: Edition 1.0 (ed. 1.0).
• Number of pages: 25 pages.

Scope

This part of IEC 63068 specifies a practical procedure for combined optical inspection and photoluminescence measurements to detect and evaluate defects in as‑grown 4H‑SiC homoepitaxial wafers used for power devices. It is intended to be used alongside the other parts of the IEC 63068 series (classification and individual test methods) and provides illustrative images and evaluation examples to harmonize defect recognition and reporting between laboratories and manufacturers.

Key topics and requirements

• Procedure for combining optical inspection and photoluminescence (PL) to improve defect detection sensitivity and classification.
• Guidance on imaging conditions, typical feature appearances, and interpretation rules for PL and optical images.
• Criteria for identifying common defect types in 4H‑SiC homoepitaxial wafers and examples for categorization.
• Non‑destructive evaluation workflow intended for process control, incoming inspection and root‑cause analysis.
• References to normative parts of the IEC 63068 series (Part 1: classification; Part 2: optical inspection; Part 3: photoluminescence test methods).

Typical use and users

Primary users include SiC wafer manufacturers, power semiconductor device manufacturers, test and qualification laboratories, quality and reliability engineers, and R&D teams working on SiC epitaxy and device yield improvement. Typical uses are incoming wafer inspection, process monitoring, defect mapping for yield enhancement, and supporting failure analysis where non‑destructive identification of wafer defects is required.

Related standards

IEC 63068-4 is part of the IEC 63068 series. Closely related standards include IEC 63068-1 (classification of defects), IEC 63068-2 (test method for defects using optical inspection) and IEC 63068-3 (test method for defects using photoluminescence). Users will often apply these parts together to establish a complete, harmonized non‑destructive defect recognition and reporting scheme for SiC wafers.

Keywords

silicon carbide; SiC; 4H‑SiC; homoepitaxial wafer; non‑destructive testing; photoluminescence; optical inspection; defect recognition; power devices; wafer inspection; IEC 63068.

FAQ

Q: What is this standard?

A: IEC 63068-4:2022 is an international standard that describes a combined optical inspection and photoluminescence procedure for identifying and evaluating defects in as‑grown 4H‑SiC homoepitaxial wafers used for power semiconductor devices.

Q: What does it cover?

A: It covers the procedure and practical guidance for using optical inspection together with photoluminescence to detect, image and categorize defects, and provides example images and evaluation guidance to promote consistent recognition and reporting.

Q: Who typically uses it?

A: SiC wafer and device manufacturers, test/qualification labs, quality engineers, and research teams focused on epitaxy, device yield and failure analysis.

Q: Is it current or superseded?

A: It was published on 27 July 2022 and is a current IEC publication (Edition 1.0). The IEC record lists a stability date through 2026, indicating it is not marked as superseded as of the stability period.

Q: Is it part of a series?

A: Yes — it is Part 4 of the IEC 63068 series. Other parts (1–3) cover defect classification, optical inspection test methods and photoluminescence test methods respectively and are intended to be used together for a complete non‑destructive defect recognition framework.

Q: What are the key keywords?

A: silicon carbide, 4H‑SiC, homoepitaxial wafer, non‑destructive testing, photoluminescence, optical inspection, defect recognition, power devices, IEC 63068.