IEC TS 62607-6-8-2023 PDF

Full title and description

Nanomanufacturing - Key control characteristics - Part 6-8: Graphene - Sheet resistance: In-line four-point probe. This Technical Specification defines a standardized in-line four-point probe (4PP) method to determine the sheet resistance RS (ohm per square, Ω/sq) of graphene films by measuring four-terminal electrical resistance using four electrodes placed on the planar sample surface. The method is intended for graphene produced by CVD (and graphene grown from silicon carbide) when supported on insulating substrates (for example quartz, SiO2 on Si) and covers a measurement range from 10−2 Ω/sq to 10^4 Ω/sq.

Abstract

This Technical Specification (IEC TS 62607-6-8:2023) specifies the in-line four-point probe procedure, practical measurement setup, and reporting essentials for sheet-resistance determination of graphene films intended for manufacturing and process control. It complements other sheet-resistance methods (for example the van der Pauw method) and is targeted at cases where boundary contacts are impractical or when in-line probing is required for production monitoring.

General information

• Status: Current / Published Technical Specification.
• Publication date: 7 June 2023.
• Publisher: International Electrotechnical Commission (IEC), TC 113 (Nanotechnology for electrotechnical products and systems).
• ICS / categories: 07.120 (Nanotechnology).
• Edition / version: Edition 1.0 (2023).
• Number of pages: 22 pages.

Scope

IEC TS 62607-6-8:2023 establishes a measurement method for the key control characteristic "sheet resistance" (RS) of graphene using an in-line four-point probe technique. The scope covers implementation details needed for reliable, repeatable measurements on planar graphene samples, with practical guidance on probe geometry, contact formation, measurement ranges (10−2 Ω/sq to 10^4 Ω/sq), applicable substrate materials (quartz, SiO2 on Si, etc.), and recommendations when the method should be used instead of or alongside alternative methods (for example van der Pauw). The document is intended for use in research, development and production environments where in-line or local probing is required.

Key topics and requirements

• Definition of sheet resistance RS (Ω/sq) and traceability considerations for electrical measurements.
• Detailed measurement protocol for the in-line four-point probe (4PP) arrangement: electrode spacing, contact conditions, four-terminal resistance measurement and geometric corrections.
• Measurement range and uncertainty considerations (nominal RS range 10−2 to 10^4 Ω/sq) and recommendations to quantify and report uncertainty components.
• Sample applicability: CVD graphene transferred to insulating substrates and graphene grown on silicon carbide; limitations and conditions where the method is most useful (e.g., when placing contacts at the sample boundary is impractical).
• Guidance on complementarity with other measurement methods (van der Pauw, transmission-line measurements, Hall methods) and when to prefer each technique for production or laboratory evaluation.

Typical use and users

Primary users include graphene and 2D-material manufacturers, production quality engineers, process control/metrology teams, research laboratories working on graphene device fabrication, and independent test laboratories performing sheet-resistance mapping or in-line electrical checks. The specification is suited for integration into inline quality assurance for roll-to-roll or batch transfer processes and for R&D labs validating electrical uniformity of graphene films.

Related standards

IEC TS 62607-6-8 is part of the IEC 62607 series (Nanomanufacturing — Key control characteristics). Closely related documents include: IEC TS 62607-6-7 (Graphene — Sheet resistance: van der Pauw method), IEC TS 62607-6-5 (Graphene-based materials — Contact and sheet resistance: transmission line measurement), and other parts of the IEC 62607 family that address electrical, optical and structural key control characteristics for nanomaterials and nano-enabled devices. These related parts provide alternative or complementary measurement methods (vdP, TLM, Hall, etc.) and broader guidance for nanomanufacturing KCCs.

Keywords

Graphene; sheet resistance; RS; in-line four-point probe; 4PP; nanomanufacturing; TC 113; metrology; process control; CVD graphene; van der Pauw (complementary method).

FAQ

Q: What is this standard?

A: IEC TS 62607-6-8:2023 is a Technical Specification that defines an in-line four-point probe method to measure the sheet resistance of graphene films for nanomanufacturing process control and metrology.

Q: What does it cover?

A: It covers the measurement procedure, probe arrangement and geometry, applicable measurement range (10−2 to 10^4 Ω/sq), sample and substrate applicability (CVD graphene transferred to insulating substrates and graphene from silicon carbide), uncertainty considerations, and reporting recommendations.

Q: Who typically uses it?

A: Manufacturers of graphene and related 2D materials, QA/QC and process engineers, metrology labs, academic and industrial R&D teams, and certification or testing facilities that require standardized sheet-resistance measurements for production or device evaluation.

Q: Is it current or superseded?

A: It is a current Technical Specification published in June 2023 (Edition 1.0) and listed with a stability date by the IEC; users should follow IEC updates or revisions beyond 2023 if published.

Q: Is it part of a series?

A: Yes — it is part of the IEC 62607 series ("Nanomanufacturing — Key control characteristics"), which contains multiple parts addressing graphene and other nanomaterials measurement methods (for example IEC TS 62607-6-7, IEC TS 62607-6-5 and other related parts).

Q: What are the key keywords?

A: Graphene, sheet resistance, in-line four-point probe, 4PP, metrology, nanomanufacturing, CVD graphene, process control.