Moldova standards PDF
Semiconductor devices - Discrete devices - Part 6- Thyristors - Section One- Blank detail specification for reverse blocking triode thyristors, ambient and case-rated, up to 100 A. CEI/IEC 747-6-1:1989. Original standard IEC 60747-6-1-1989 in PDF full version. Additional info + preview on request
Document status: Withdrawn
Semiconductor devices - Discrete devices - Part 6- Thyristors - Section Two- Blank detail specification for bidirectional triode thyristors (triacs), ambient or case-rated, up to 100 A. CEI/IEC 747-6-2:1991. Original standard IEC 60747-6-2-1991 in PDF full version. Additional info + preview on request
Document status: Withdrawn
Semiconductor devices - Part 6- Discrete devices - Thyristors. Original standard IEC 60747-6-2016 in PDF full version. Additional info + preview on request
Document status: Replaced by St IEC 60747-6-2025
Semiconductor devices - Discrete devices - Part 6- Thyristors - Section Three- Blank detail specification for reverse blocking triode thyristors, ambient and case-rated, for currents greater than 100 A. CEI/IEC 747-6-3:1993. Original standard IEC 60747-6-3-1993 in PDF full version. Additional info + preview on request
Document status: Withdrawn
Semiconductor devices - Discrete devices - Part 7- Bipolar transistors - Section One- Blank detail specification for ambient-rated bipolar transistors for low and high-frequency amplification. CEI/IEC 60747-7-1:1989. Original standard IEC 60747-7-1-1989 in PDF full version. Additional info + preview on request
Document status: Withdrawn
Semiconductor devices - Discrete devices - Part 7- Bipolar transistors - Section Two- Blank detail specification for case-rated bipolar transistors for low-frequency amplification. CEI/IEC 60747-7-2:1989. Original standard IEC 60747-7-2-1989 in PDF full version. Additional info + preview on request
Document status: Withdrawn